Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3682346
Title: Variable range hopping in TiO2 insulating layers for oxide electronic devices
Authors: Zhao, Y.L.
Lv, W.M.
Liu, Z.Q.
Zeng, S.W.
Motapothula, M.
Dhar, S. 
Ariando 
Wang, Q. 
Venkatesan, T. 
Issue Date: 2012
Citation: Zhao, Y.L., Lv, W.M., Liu, Z.Q., Zeng, S.W., Motapothula, M., Dhar, S., Ariando, Wang, Q., Venkatesan, T. (2012). Variable range hopping in TiO2 insulating layers for oxide electronic devices. AIP Advances 2 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3682346
Abstract: TiO2 thin films are of importance in oxide electronics, e.g., Pt/TiO2/Pt for memristors and Co-TiO2/TiO 2/Co-TiO2 for spin tunneling devices. When such structures are deposited at a variety of oxygen pressures, how does TiO2 behave as an insulator? We report the discovery of an anomalous resistivity minimum in a TiO2 film at low pressure (not strongly dependent on deposition temperature). Hall measurements rule out band transport and in most of the pressure range the transport is variable range hopping (VRH) though below 20 K it was difficult to differentiate between Mott and Efros-Shklovskii's (ES) mechanism. Magnetoresistance (MR) of the sample with lowest resistivity was positive at low temperature (for VRH) but negative above 10 K indicating quantum interference effects. © 2012 Author(s).
Source Title: AIP Advances
URI: http://scholarbank.nus.edu.sg/handle/10635/83255
ISSN: 21583226
DOI: 10.1063/1.3682346
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

12
checked on Nov 13, 2018

WEB OF SCIENCETM
Citations

11
checked on Nov 13, 2018

Page view(s)

42
checked on Sep 28, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.