Please use this identifier to cite or link to this item:
|Title:||Vacancy effects on plasma-induced damage to n-type GaN|
|Authors:||Chua, S.J. |
|Citation:||Chua, S.J.,Choi, H.W.,Zhang, J.,Li, P. (2001-11-15). Vacancy effects on plasma-induced damage to n-type GaN. Physical Review B - Condensed Matter and Materials Physics 64 (20) : 2053021-2053025. ScholarBank@NUS Repository.|
|Abstract:||Two modes of plasma-induced damage to n-type GaN have been identified, giving rise to contrasting changes to the transport properties. The formation of VGa-ON complexes introduces a deep level in the band gap, while V N give rise to a shallow level in n-GaN. We suggest that when VGa are present in abundance in the bulk, vacancy-complex formation becomes the dominant mechanism of plasma damage that results in an increased resistivity. In the absence of VGa, VN created by the plasma process dominates in creating an enhanced surface conductivity region.|
|Source Title:||Physical Review B - Condensed Matter and Materials Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 12, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.