Please use this identifier to cite or link to this item: https://doi.org/10.1039/c1ce05882g
Title: Universal photoluminescence evolution of solution-grown ZnO nanorods with annealing: Important role of hydrogen donor
Authors: Huang, X.H.
Tay, C.B. 
Zhan, Z.Y.
Zhang, C.
Zheng, L.X.
Venkatesan, T. 
Chua, S.J. 
Issue Date: 7-Dec-2011
Citation: Huang, X.H., Tay, C.B., Zhan, Z.Y., Zhang, C., Zheng, L.X., Venkatesan, T., Chua, S.J. (2011-12-07). Universal photoluminescence evolution of solution-grown ZnO nanorods with annealing: Important role of hydrogen donor. CrystEngComm 13 (23) : 7032-7036. ScholarBank@NUS Repository. https://doi.org/10.1039/c1ce05882g
Abstract: Poor near-band-edge emission (NBE) prohibits the application of solution-grown ZnO nanorods in optoelectronics, thus their photoluminescence (PL) was studied with respect to post-annealing temperature and duration. A universal behavior was revealed: NBE was enhanced by one order (or two) of magnitude after annealing in air (or H2) at about 425 °C for 30 min, while the enhancement factor starts to decrease after annealing at higher temperatures. The evolution of PL was mainly ascribed to annealing-induced activation and dissociation of hydrogen donor, which was identified as H O by both PL and Raman analyses. Results from nanorods with different diameters and annealing gases further support this assignment. The results provide new insights to understand and optimize the properties of solution-grown ZnO. This journal is © The Royal Society of Chemistry.
Source Title: CrystEngComm
URI: http://scholarbank.nus.edu.sg/handle/10635/83252
ISSN: 14668033
DOI: 10.1039/c1ce05882g
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