Please use this identifier to cite or link to this item: https://doi.org/10.1149/2.026309jss
Title: Unexpectedly high etching rate of highly doped n-type crystalline silicon in hydrofluoric acid
Authors: Liu, L.
Lin, F. 
Heinrich, M.
Aberle, A.G. 
Hoex, B. 
Issue Date: 2013
Citation: Liu, L., Lin, F., Heinrich, M., Aberle, A.G., Hoex, B. (2013). Unexpectedly high etching rate of highly doped n-type crystalline silicon in hydrofluoric acid. ECS Journal of Solid State Science and Technology 2 (9) : P380-P383. ScholarBank@NUS Repository. https://doi.org/10.1149/2.026309jss
Abstract: The high selectivity in etching of dielectric films over crystalline silicon (c-Si) by hydrofluoric acid (HF) is routinely exploited in the fabrication of various silicon based devices such as microelectromechanical systems (MEMS) and silicon solar cells. In this paper it is shown that the high selectivity does not apply to highly doped n-type c-Si. We confirm experimentally that the etch rate of highly doped n-type c-Si is about 0.8 nm/minute in diluted HF, which is more than 10 times higher than previous results reported in the literature and measured at lower carrier concentrations. We propose that a combination of factors is contributing to the observed fast etching rate of heavily doped n-type c-Si. The proper understanding and exploitation of the etching mechanism of n+ c-Si by HF can be very beneficial for the fabrication of silicon MEMS and solar cell devices. © 2013 The Electrochemical Society.
Source Title: ECS Journal of Solid State Science and Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/83250
ISSN: 21628769
DOI: 10.1149/2.026309jss
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