Please use this identifier to cite or link to this item: https://doi.org/10.1109/TDMR.2007.912273
Title: Understand NBTI mechanism by developing novel measurement techniques
Authors: Li, M.-F. 
Huang, D.
Shen, C.
Yang, T.
Liu, W.J.
Liu, Z.
Keywords: CMOS
Negative bias temperature instability (NBTI)
Reliability
Issue Date: Mar-2008
Citation: Li, M.-F., Huang, D., Shen, C., Yang, T., Liu, W.J., Liu, Z. (2008-03). Understand NBTI mechanism by developing novel measurement techniques. IEEE Transactions on Device and Materials Reliability 8 (1) : 62-70. ScholarBank@NUS Repository. https://doi.org/10.1109/TDMR.2007.912273
Abstract: Our recent investigations and understanding of the negative bias temperature instability (NBTI) degradation in p-MOSFETs with ultrathin SiON gate dielectric are reviewed. The progressive understanding of NBTI mechanism is mainly related to the novel measurement techniques we developed. We show in this paper the following: 1) For the conventional charge pumping and direct-current current-voltage interface trap measurement, the interface trap density N it is underestimated due to the recovery during measurement delay. The existing Nit data should be reexamined; 2) an ultrafast pulsed I-V method [fast pulsed measurement (FPM)] is developed to measure ΔV th with measurement time tM = 100 ns. It can be considered as free from recovery during measurement; 3) due to the degradation during the initial threshold voltage measurement, the existing slow on-the-fly (OTF) ΔVth measurement distorts (overestimates) the slope and induces a kink at early stress time in the Log-Log curve of the time evolution of NBTI degradation. A fast OTF ΔVth measurement method is developed to overcome this problem; 4) a novel OTF interface trap (OFIT) measurement method is developed which is free from interface trap recovery during measurement. The OFIT measurement provides the most reliable data to inspect the interface trap R-D model; 5) combining the OFIT and FPM measurements, we decompose the NBTI ΔVth into two components: A slow ΔVth it component contributed by ΔNit with a slow recovery time longer than 50 μs and a fast ΔVth ox component contributed by ΔNox with a broad spectrum of recovery time, including a component with very fast recovery time (100 ns); and 6) the dynamic degradation by ΔVth it component is frequency-independent and can be measured by a dc method, whereas the dynamic degradation by ΔVth ox component measured by FPM is increased by increasing frequency. The ten-year lifetime of the p-MOSFETs is mainly determined by the degradation of the ΔVth it component. © 2008 IEEE.
Source Title: IEEE Transactions on Device and Materials Reliability
URI: http://scholarbank.nus.edu.sg/handle/10635/83248
ISSN: 15304388
DOI: 10.1109/TDMR.2007.912273
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