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https://doi.org/10.1149/1.2052051
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dc.title | Ultrathin HfO2(EOT < 0.75 nm) gate stack with TaN/HfN electrodes fabricated using a high-temperature process | |
dc.contributor.author | Kang, J.F. | |
dc.contributor.author | Yu, H.Y. | |
dc.contributor.author | Ren, C. | |
dc.contributor.author | Li, M.-F. | |
dc.contributor.author | Chan, D.S.H. | |
dc.contributor.author | Liu, X.Y. | |
dc.contributor.author | Kwong, D.-L. | |
dc.date.accessioned | 2014-10-07T04:38:59Z | |
dc.date.available | 2014-10-07T04:38:59Z | |
dc.date.issued | 2005 | |
dc.identifier.citation | Kang, J.F., Yu, H.Y., Ren, C., Li, M.-F., Chan, D.S.H., Liu, X.Y., Kwong, D.-L. (2005). Ultrathin HfO2(EOT < 0.75 nm) gate stack with TaN/HfN electrodes fabricated using a high-temperature process. Electrochemical and Solid-State Letters 8 (11) : G311-G313. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2052051 | |
dc.identifier.issn | 10990062 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/83243 | |
dc.description.abstract | High quality TaN/HfN/HfO2 gate stacks with 0.65 nm of the equivalent oxide thickness and 0.3 A/cm2 at (-1V + VFB) of the gate leakage have been demonstrated. An NH3-based Si-surface nitridation process was performed prior to HfO2 deposition. The HfO2 films were deposited in a metallorganic chemical vapor deposition cluster tool. The TaN/HfN metal stacked layers were deposited on HfO2 by reactive sputtering. The gate stack shows excellent thermal stability, in equivalent oxide thickness (EOT) and leakage after 1000°C annealing. A 10-year time dependent dielectric breakdown lifetime of 1000°C rapid thermal anneal annealed HfN/HfO2 stack is projected at V g = -3 V with an EOT = 0.75 nm. © 2005 The Electrochemical Society. All rights reserved. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/1.2052051 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1149/1.2052051 | |
dc.description.sourcetitle | Electrochemical and Solid-State Letters | |
dc.description.volume | 8 | |
dc.description.issue | 11 | |
dc.description.page | G311-G313 | |
dc.description.coden | ESLEF | |
dc.identifier.isiut | 000232340900032 | |
Appears in Collections: | Staff Publications |
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