Please use this identifier to cite or link to this item:
|Title:||Tunneling field-effect transistor: Effect of strain and temperature on tunneling current|
Tunneling field-effect transistor (TFET)
|Citation:||Guo, P.-F., Yang, L.-T., Yang, Y., Fan, L., Han, G.-Q., Samudra, G.S., Yeo, Y.-C. (2009). Tunneling field-effect transistor: Effect of strain and temperature on tunneling current. IEEE Electron Device Letters 30 (9) : 981-983. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2026296|
|Abstract:||We report the first study of the effect of strain on tunneling field-effect transistor (TFET) characteristics. Double-gate silicon TFETs were employed. It was found that tensile strain increases the drain current, whereas compressive strain reduces the drain current. This is attributed to strain-induced band splitting and carrier repopulation and provides guidelines on strain engineering of TFETs. An elaborate study of the dependence of the electrical characteristics of TFET on temperature is also reported. It was observed that ON-state tunneling current exhibits a positive temperature dependence at low drain bias condition (VDS = 1 V), whereas opposite behavior was observed when VDS = 1.5 V. When the device temperature is increased, enhancement of the drain current at VDS = 1 V results from band gap narrowing, whereas reduction in the drain current at VDS = 1.5 V is attributed to the decrease in the electric field at the tunneling junction. © 2009 IEEE.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Nov 14, 2018
WEB OF SCIENCETM
checked on Nov 6, 2018
checked on Aug 3, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.