Tunneling field-effect transistor: Capacitance components and modeling

Abstract

We report a numerical simulation study of gate capacitance components in a tunneling field-effect transistor (TFET), showing key differences in the partitioning of gate capacitance between the source and drain as compared with a MOSFET. A compact model for TFET capacitance components, including parasitic and inversion capacitances, was built and calibrated with computer-aided design data. This model should be useful for further investigation of performance of circuits containing TFETs. The dependence of gatedrain capacitance C gd on drain design and gate length was further investigated for reduction of switching delay in TFETs. © 2010 IEEE.