Please use this identifier to cite or link to this item:
|Title:||Tunneling field-effect transistor: Capacitance components and modeling|
tunneling field-effect transistor (TFET)
|Citation:||Yang, Y., Tong, X., Yang, L.-T., Guo, P.-F., Fan, L., Yeo, Y.-C. (2010-07). Tunneling field-effect transistor: Capacitance components and modeling. IEEE Electron Device Letters 31 (7) : 752-754. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2010.2047240|
|Abstract:||We report a numerical simulation study of gate capacitance components in a tunneling field-effect transistor (TFET), showing key differences in the partitioning of gate capacitance between the source and drain as compared with a MOSFET. A compact model for TFET capacitance components, including parasitic and inversion capacitances, was built and calibrated with computer-aided design data. This model should be useful for further investigation of performance of circuits containing TFETs. The dependence of gatedrain capacitance C gd on drain design and gate length was further investigated for reduction of switching delay in TFETs. © 2010 IEEE.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 11, 2018
WEB OF SCIENCETM
checked on Dec 3, 2018
checked on Nov 23, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.