Please use this identifier to cite or link to this item: https://doi.org/10.1021/nn800031m
Title: Tunable stress and controlled thickness modification in graphene by annealing
Authors: Ni, Z.H.
Wang, H.M.
Ma, Y.
Kasim, J.
Wu, Y.H. 
Shen, Z.X.
Keywords: Annealing
Defects
Graphene
Raman
Stress
Issue Date: May-2008
Source: Ni, Z.H., Wang, H.M., Ma, Y., Kasim, J., Wu, Y.H., Shen, Z.X. (2008-05). Tunable stress and controlled thickness modification in graphene by annealing. ACS Nano 2 (5) : 1033-1039. ScholarBank@NUS Repository. https://doi.org/10.1021/nn800031m
Abstract: Graphene has many unique properties which make it an attractive material for fundamental study as well as for potential applications. In this paper, we report the first experimental study of process-induced defects and stress in graphene using Raman spectroscopy and imaging. While defects lead to the observation of defect-related Raman bands, stress causes shift in phonon frequency. A compressive stress (as high as 2.1 GPa) was induced in graphene by depositing a 5 nm SiO2 followed by annealing, whereas a tensile stress (∼0.7 GPa) was obtained by depositing a thin silicon capping layer. In the former case, both the magnitude of the compressive stress and number of graphene layers can be controlled or modified by the annealing temperature. As both the stress and thickness affect the physical properties of graphene, this study may open up the possibility of utilizing thickness and stress engineering to improve the performance of graphene-based devices. Local heating techniques may be used to either induce the stress or reduce the thickness selectively. © 2008 American Chemical Society.
Source Title: ACS Nano
URI: http://scholarbank.nus.edu.sg/handle/10635/83223
ISSN: 19360851
DOI: 10.1021/nn800031m
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