Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3260250
Title: Thermomigration-induced magnetic degradation of current perpendicular to the plane giant magnetoresistance spin-valve read sensors operating at high current density
Authors: Zeng, D.G.
Chung, K.-W.
Bae, S. 
Issue Date: 2009
Citation: Zeng, D.G., Chung, K.-W., Bae, S. (2009). Thermomigration-induced magnetic degradation of current perpendicular to the plane giant magnetoresistance spin-valve read sensors operating at high current density. Journal of Applied Physics 106 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3260250
Abstract: The theoretically analyzed physical mechanism of thermomigration (TM)-induced magnetic degradation that occurred in the current perpendicular to the plane (CPP) Ir20Mn80 exchange biased giant magnetoresistance spin-valve (EBGMR SV) read sensors is presented. The device size was changed from 60×60 to 140×140 nm2 at the fixed aspect ratio of 1(L):1(W), and the operating current density was varied from J=1× 108 A/ cm2 to J=5× 108 A/ cm2 in a current control mode. It was numerically confirmed that the Mn atomic interdiffusion through the Ir20Mn80/ Co 80Fe20 interface due to the thermally induced mass transport and the "Villari magnetic reversal" of the CoFe pinned layer due to the thermally induced stress are mainly responsible for the serious degradation of exchange bias and magnetoresistance. Furthermore, the TM-induced magnetic degradation of CPP EBGMR SV read sensors was found to become severe by increasing the operating current density. However, interestingly, this undesirable magnetic degradation was dramatically diminished by reducing the read sensors below 100 (L) ×100 (W) nm2. © 2009 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/83201
ISSN: 00218979
DOI: 10.1063/1.3260250
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