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|Title:||The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge 0.25 and (100)Si at 400 °C|
|Citation:||Jin, L.J., Pey, K.L., Choi, W.K., Fitzgerald, E.A., Antoniadis, D.A., Pitera, A.J., Lee, M.L., Chi, D.Z., Tung, C.H. (2004-09). The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge 0.25 and (100)Si at 400 °C. Thin Solid Films 462-463 (SPEC. ISS.) : 151-155. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2004.05.047|
|Abstract:||The reaction of Ni with Ge, Si0.75Ge0.25 and Si using rapid thermal annealing (RTA) and in-situ annealing method at 400 °C produces different phases, as revealed by cross-sectional transmission electron microscopy (TEM). A uniform film of nickel germanide (NiGe) was formed at 400 °C for the Ni reaction with Ge using the in-situ annealing technique, whereas Ni3Ge2 and NiGe phases were found using the RTA method. For the reaction between Ni and Si, a highly textured NiSi film was obtained at 400 °C for RTA whereas Ni3Si2 and NiSi were found using the in-situ annealing method. On the other hand, a relatively uniform NiSiGe was formed using RTA; Ni3(Si1-yGe y)2 and Ni(Si1-xGex) (x|
|Source Title:||Thin Solid Films|
|Appears in Collections:||Staff Publications|
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