Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2004.05.047
Title: The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge 0.25 and (100)Si at 400 °C
Authors: Jin, L.J.
Pey, K.L. 
Choi, W.K. 
Fitzgerald, E.A.
Antoniadis, D.A.
Pitera, A.J.
Lee, M.L.
Chi, D.Z.
Tung, C.H.
Keywords: In-situ annealing
Ni germanide
Ni germanosilicide
Ni silicide
Issue Date: Sep-2004
Citation: Jin, L.J., Pey, K.L., Choi, W.K., Fitzgerald, E.A., Antoniadis, D.A., Pitera, A.J., Lee, M.L., Chi, D.Z., Tung, C.H. (2004-09). The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge 0.25 and (100)Si at 400 °C. Thin Solid Films 462-463 (SPEC. ISS.) : 151-155. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2004.05.047
Abstract: The reaction of Ni with Ge, Si0.75Ge0.25 and Si using rapid thermal annealing (RTA) and in-situ annealing method at 400 °C produces different phases, as revealed by cross-sectional transmission electron microscopy (TEM). A uniform film of nickel germanide (NiGe) was formed at 400 °C for the Ni reaction with Ge using the in-situ annealing technique, whereas Ni3Ge2 and NiGe phases were found using the RTA method. For the reaction between Ni and Si, a highly textured NiSi film was obtained at 400 °C for RTA whereas Ni3Si2 and NiSi were found using the in-situ annealing method. On the other hand, a relatively uniform NiSiGe was formed using RTA; Ni3(Si1-yGe y)2 and Ni(Si1-xGex) (x
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/83175
ISSN: 00406090
DOI: 10.1016/j.tsf.2004.05.047
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