Please use this identifier to cite or link to this item: https://doi.org/10.1143/JJAP.43.L1208
Title: The electrical and material properties of HfO xN y dielectric on germanium substrate
Authors: Zhang, Q.
Wu, N.
Zhu, C. 
Keywords: Annealing
Deposition
Germanium
Hafnium oxynitride
MOS capacitor
Issue Date: 15-Sep-2004
Citation: Zhang, Q., Wu, N., Zhu, C. (2004-09-15). The electrical and material properties of HfO xN y dielectric on germanium substrate. Japanese Journal of Applied Physics, Part 2: Letters 43 (9 AB) : L1208-L1210. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.43.L1208
Abstract: Hafnium oxynitride (HfO xN y) film was investigated as a possible gate dielectric of germanium metal-oxide-semiconductor (MOS) device. The thin HfO xN y dielectric was prepared using reactive sputtering, followed by post deposition annealing (PDA). The dependence of the equivalent oxide thickness (EOT) on PDA condition was investigated. A small EOT of 19.7 Å with a low leakage current of 3.1 × 10 -5 A/cm 2 (V g = 1 V) was achieved with PDA at 600°C. In addition, the material properties of HfO xN y on germanium were analyzed by X-ray photoelectron spectroscopy. The nitrogen is found to pile up at the dielectric/substrate interface and to form Ge-N bonds, which contribute to the interfacial layer (IL) suppression.
Source Title: Japanese Journal of Applied Physics, Part 2: Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/83170
ISSN: 00214922
DOI: 10.1143/JJAP.43.L1208
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