Please use this identifier to cite or link to this item:
|Title:||The electrical and material properties of HfO xN y dielectric on germanium substrate|
|Citation:||Zhang, Q., Wu, N., Zhu, C. (2004-09-15). The electrical and material properties of HfO xN y dielectric on germanium substrate. Japanese Journal of Applied Physics, Part 2: Letters 43 (9 AB) : L1208-L1210. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.43.L1208|
|Abstract:||Hafnium oxynitride (HfO xN y) film was investigated as a possible gate dielectric of germanium metal-oxide-semiconductor (MOS) device. The thin HfO xN y dielectric was prepared using reactive sputtering, followed by post deposition annealing (PDA). The dependence of the equivalent oxide thickness (EOT) on PDA condition was investigated. A small EOT of 19.7 Å with a low leakage current of 3.1 × 10 -5 A/cm 2 (V g = 1 V) was achieved with PDA at 600°C. In addition, the material properties of HfO xN y on germanium were analyzed by X-ray photoelectron spectroscopy. The nitrogen is found to pile up at the dielectric/substrate interface and to form Ge-N bonds, which contribute to the interfacial layer (IL) suppression.|
|Source Title:||Japanese Journal of Applied Physics, Part 2: Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 21, 2019
WEB OF SCIENCETM
checked on Feb 13, 2019
checked on Jan 26, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.