Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2005.848130
Title: The effect of IrO2-IrO2- Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-D GOI CMOSFETs
Authors: Yu, D.S.
Liao, C.C.
Cheng, C.F.
Chin, A. 
Li, M.F. 
McAlister, S.P.
Keywords: Bias-temperature instability (BTI)
Germanium-on-insulator (GOI)
High Κ
LaAlO3
Metal gate
Three-dimensional (3-D)
Issue Date: Jun-2005
Citation: Yu, D.S., Liao, C.C., Cheng, C.F., Chin, A., Li, M.F., McAlister, S.P. (2005-06). The effect of IrO2-IrO2- Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-D GOI CMOSFETs. IEEE Electron Device Letters 26 (6) : 407-409. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.848130
Abstract: We have studied the bias-temperature instability of three-dimensional self-aligned metal-gate/high-Κ/Germanium-on-insulator (GOI) CMOSFETs, which were integrated on underlying 0.18 μm CMOSFETs. The devices used IrO2-IrO2-Hf dual gates and a high-Κ LaAiO3 gate dielectric, and gave an equivalent-oxide thickness (EOT) of 1.4 mn. The metal-gate/high-Κ/GOI p-and n-MOSFETs displayed threshold voltage (Vt) shifts of 30 and 21 mV after 10 MV/cm, 85 °C stress for 1 h, comparable with values for the control two-dimensional (2-D) metal-gate/high-Κ-Si CMOSFETs. An extrapolated maximum voltage of - 1.2 and 1.4 V for a ten-year lifetime was obtained from the bias-temperature stress measurements on the GOI CMOSFETs. © 2005 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/83161
ISSN: 07413106
DOI: 10.1109/LED.2005.848130
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