Please use this identifier to cite or link to this item:
|Title:||The effect of IrO2-IrO2- Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-D GOI CMOSFETs|
|Keywords:||Bias-temperature instability (BTI)|
|Citation:||Yu, D.S., Liao, C.C., Cheng, C.F., Chin, A., Li, M.F., McAlister, S.P. (2005-06). The effect of IrO2-IrO2- Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-D GOI CMOSFETs. IEEE Electron Device Letters 26 (6) : 407-409. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.848130|
|Abstract:||We have studied the bias-temperature instability of three-dimensional self-aligned metal-gate/high-Κ/Germanium-on-insulator (GOI) CMOSFETs, which were integrated on underlying 0.18 μm CMOSFETs. The devices used IrO2-IrO2-Hf dual gates and a high-Κ LaAiO3 gate dielectric, and gave an equivalent-oxide thickness (EOT) of 1.4 mn. The metal-gate/high-Κ/GOI p-and n-MOSFETs displayed threshold voltage (Vt) shifts of 30 and 21 mV after 10 MV/cm, 85 °C stress for 1 h, comparable with values for the control two-dimensional (2-D) metal-gate/high-Κ-Si CMOSFETs. An extrapolated maximum voltage of - 1.2 and 1.4 V for a ten-year lifetime was obtained from the bias-temperature stress measurements on the GOI CMOSFETs. © 2005 IEEE.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 12, 2019
WEB OF SCIENCETM
checked on Jan 28, 2019
checked on Feb 8, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.