Please use this identifier to cite or link to this item: https://doi.org/10.1023/B:IJIM.0000047443.74769.7b
Title: Temperature effects on the performance of on-chip spiral inductors used in RF(MM)ICs
Authors: Shi, J.
Kang, K.
Yeo, T.-S.
Wu, B. 
Liao, H.
Xiong, Y.Z.
Rustagi, S.C.
Keywords: GaAs
Metal trace resistance
On-chip spiral inductors
Q-factor
Silicon
Temperature coefficients
Issue Date: Oct-2004
Citation: Shi, J., Kang, K., Yeo, T.-S., Wu, B., Liao, H., Xiong, Y.Z., Rustagi, S.C. (2004-10). Temperature effects on the performance of on-chip spiral inductors used in RF(MM)ICs. International Journal of Infrared and Millimeter Waves 25 (10) : 1511-1522. ScholarBank@NUS Repository. https://doi.org/10.1023/B:IJIM.0000047443.74769.7b
Abstract: Based on the measured S-parameters and proposed circuit model for on-chip spiral inductors, the overall effects of temperature rise on the inductor performance are examined in this paper. For circular spiral inductors on silicon substrates, it is shown that when the temperature increases from 25°C to 85°C, the peak values of Q-factor (Q max) of inductors, corresponding to the turn number N = 3 to 7, decrease about 8.8% to 19%, respectively. The metal trace and silicon substrate resistances both increase linearly with temperature, while the capacitance of silicon substrate has a negative temperature coefficient. For a square spiral inductor on GaAs substrate, its Q max decreases about 37.2% as temperature increases from 25 °C to 185 °C. The corresponding frequency f max tends to shift from 9.44 GHz to 7.73 GHz. and it is reduced about 18.1%.
Source Title: International Journal of Infrared and Millimeter Waves
URI: http://scholarbank.nus.edu.sg/handle/10635/83151
ISSN: 01959271
DOI: 10.1023/B:IJIM.0000047443.74769.7b
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