Please use this identifier to cite or link to this item:
https://doi.org/10.1109/LED.2003.821590
DC Field | Value | |
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dc.title | TDDB and Polarity-Dependent Reliability of High-Quality, Ultrathin CVD HfO 2 Gate Stack with TaN Gate Electrode | |
dc.contributor.author | Lee, S. | |
dc.contributor.author | Kwong, D.L. | |
dc.date.accessioned | 2014-10-07T04:37:50Z | |
dc.date.available | 2014-10-07T04:37:50Z | |
dc.date.issued | 2004-01 | |
dc.identifier.citation | Lee, S., Kwong, D.L. (2004-01). TDDB and Polarity-Dependent Reliability of High-Quality, Ultrathin CVD HfO 2 Gate Stack with TaN Gate Electrode. IEEE Electron Device Letters 25 (1) : 13-15. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2003.821590 | |
dc.identifier.issn | 07413106 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/83149 | |
dc.description.abstract | In this letter, we present a comprehensive study on longterm reliability of ultrathin TaN-gated chemical vapor deposition gate stack with EOT = 8.5-10.5 Å. It is found that, due to the asymmetric band structure of HfO 2 gate stack with an interfacial layer, the HfO 2 gate stack shows polarity-dependent leakage current, critical defect density, and defect generation rate, under gate and substrate injection. However, no such polarity dependence of time-to-breakdown (T BD) is observed when T BD is plotted as a function of gate voltage. The 10-year lifetime of an HfO 2 gate stack is projected to be Vg = -1.63 V for the equivalent oxide thickness (EOT) = 8.6 Å and Vg = -1.88 V for EOT = 10.6 Å at 25 °C. These excellent reliability characteristics are attributed to reduced leakage current of HfO 2 gate stack with physically thicker films that result in larger critical defect density and Weibull slope to that of SiO 2 for the same EOT. However, at 150 °C, and with area scaling to 0.1 cm 2 and low percentile of 0.01%, the maximum allowed voltages are projected to Vg = -0.6 V and -0.75 V for EOT of 8.6, and 10.6 A, respectively. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2003.821590 | |
dc.source | Scopus | |
dc.subject | Hafnium oxide | |
dc.subject | High-K gate stack | |
dc.subject | Metal gate electrode | |
dc.subject | Reliability | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/LED.2003.821590 | |
dc.description.sourcetitle | IEEE Electron Device Letters | |
dc.description.volume | 25 | |
dc.description.issue | 1 | |
dc.description.page | 13-15 | |
dc.description.coden | EDLED | |
dc.identifier.isiut | 000187735500005 | |
Appears in Collections: | Staff Publications |
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