Please use this identifier to cite or link to this item:
|Title:||Tailoring the growth of L10-FePt for spintronics applications|
High anisotropy constant
Perpendicular magnetic anisotropy
|Citation:||Tahmasebi, T., Piramanayagam, S.N., Sbiaa, R., Tan, H.K., Law, R., Lua, S., Chong, T.C. (2011-12). Tailoring the growth of L10-FePt for spintronics applications. Physica Status Solidi - Rapid Research Letters 5 (12) : 426-428. ScholarBank@NUS Repository. https://doi.org/10.1002/pssr.201105379|
|Abstract:||The effect of seed layers on the magnetic and structural properties of FePt thin films was investigated. For the case of Cr(200) seed layer, no ordered L10-FePt phase in (001) orientation was observed. The insertion of a thin MgO barrier between the Cr and FePt layers improved the perpendicular magnetization orientation of L10-FePt by limiting diffusion of Cr into the FePt magnetic layer. Ordered L10-FePt thin films can be developed on Pd at high substrate temperature with the lattice mismatch of below 1% and therefore low roughness compared to MgO or Cr seed layers. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) Ordered L10-FePt with large magnetocrystalline anisotropy (Ku) and high saturation magnetization (Ms) enables potential scaling of spintronic devices down to 5 nm. FePt films need to be smooth and possess good (001) texture in order to achieve the desired properties for spintronics applications. This Letter focuses on tailoring of L10-FePt growth for such applications. The L10-FePt magnetic layers deposited on Pd seed layers exhibit large ordering parameter, smoothness and strong perpendicular magnetic anisotropy. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.|
|Source Title:||Physica Status Solidi - Rapid Research Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 17, 2019
WEB OF SCIENCETM
checked on Jan 9, 2019
checked on Jan 12, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.