Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2010.03.101
Title: Synthesis and field emission properties of well-aligned ZnO nanowires on buffer layer
Authors: Ong, W.L.
Lim, S.X. 
Sow, C.H. 
Zhang, C. 
Ho, G.W. 
Keywords: Field emission
Nanowires
ZnO
Issue Date: 1-Oct-2010
Citation: Ong, W.L., Lim, S.X., Sow, C.H., Zhang, C., Ho, G.W. (2010-10-01). Synthesis and field emission properties of well-aligned ZnO nanowires on buffer layer. Thin Solid Films 518 (24 SUPPL.) : e139-e142. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2010.03.101
Abstract: Well-aligned ZnO nanowires were grown on Si (111) substrates pre-coated with a ZnO buffer layer. The nanowires are single-crystalline wurtzite structures with a preferential growth in the [0001] direction. Room temperature photoluminescence (PL) measurements of as-grown nanowires annealed in argon and air exhibited a strong ultraviolet emission and suppressed visible emission, affirming the presence of few defects. Field emission properties of the nanowires were investigated, and the lowest turn-on field obtained was 3.8 V/μm at a current density of 0.1 μA/cm2, with a corresponding field enhancement factor β of 1644. Current-voltage (I-V) and capacitance-voltage (C-V) measurements showed that the contact was ohmic and the ZnO nanowires were n-type, with little C-V hysteresis. © 2010 Elsevier B.V.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/83133
ISSN: 00406090
DOI: 10.1016/j.tsf.2010.03.101
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