Please use this identifier to cite or link to this item: https://doi.org/10.1088/0268-1242/17/12/304
Title: Surface analysis of GaN decomposition
Authors: Choi, H.W.
Rana, M.A.
Chua, S.J. 
Osipowicz, T. 
Pan, J.S.
Issue Date: Dec-2002
Citation: Choi, H.W., Rana, M.A., Chua, S.J., Osipowicz, T., Pan, J.S. (2002-12). Surface analysis of GaN decomposition. Semiconductor Science and Technology 17 (12) : 1223-1225. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/17/12/304
Abstract: The decomposition of GaN at a range of temperatures has been studied by Rutherford backscattering (RBS), x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The development of a surface defect peak is a consequence of preferential N2 loss at elevated temperatures. Additionally, the emergence of a direct scattering peak approximately 0.25μm beneath the surface at 1100 °C can be attributed to the buildup of extended defects. At such temperatures severe roughening of the surface is observed through AFM scans. Nevertheless, Ga droplet formation is not detected from our samples as verified by XPS. Our results show that GaN remains thermally stable in N2 up to 900 °C. At higher temperatures, significant decomposition occurs and gives rise to degradation of the structural and morphological properties of the film.
Source Title: Semiconductor Science and Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/83122
ISSN: 02681242
DOI: 10.1088/0268-1242/17/12/304
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

25
checked on Nov 19, 2018

WEB OF SCIENCETM
Citations

23
checked on Nov 19, 2018

Page view(s)

23
checked on Oct 19, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.