Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2006.883677
Title: Substrate effects on resonant frequency of silicon-based RF on-chip MIM capacitor
Authors: Xiong, Y.-Z.
Yu, M.-B.
Lo, G.-Q.
Li, M.-F. 
Kwong, D.-L.
Keywords: Backend intermetal dielectric (IMD)
High κ
Metal-insulator-metal (MIM)
Modeling
On-chip capacitor
Resonant frequency
Issue Date: Nov-2006
Citation: Xiong, Y.-Z., Yu, M.-B., Lo, G.-Q., Li, M.-F., Kwong, D.-L. (2006-11). Substrate effects on resonant frequency of silicon-based RF on-chip MIM capacitor. IEEE Transactions on Electron Devices 53 (11) : 2839-2842. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2006.883677
Abstract: This brief presents an analytical model that describes a silicon-based RF on-chip metal-insulator-metal (MIM) capacitor including the parasitics originating from its coupling with backend intermetal dielectric (IMD) scheme and the substrate. Results show that the resonant frequency fre depends on the intrinsic capacitance, inductance, and substrate effects of the MIM. The model and fre formula are verified experimentally for several types of MIM capacitors (i.e., high κ and Si3N4 based) integrated on different IMDs (e.g., undoped glass and low κ). The results also show that for a given CMIM, if the capacitance density is increased further so that the area is shrunk, and the inductances are reduced to a level that is comparable to the substrate effects from item ε0εr ρSiheff SiR2/heff IMD, then further fre improvement could be limited. © 2006 IEEE.
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/83111
ISSN: 00189383
DOI: 10.1109/TED.2006.883677
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