Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/83101
Title: Studies of pulsed laser deposition mechanism of WO3 thin films
Authors: Qiu, H.
Lu, Y.-F. 
Keywords: Gas reaction
Optical emission spectroscopy
Pulsed laser deposition
Raman spectroscopy
Surface oxidation
Issue Date: Jan-2001
Source: Qiu, H.,Lu, Y.-F. (2001-01). Studies of pulsed laser deposition mechanism of WO3 thin films. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 40 (1) : 183-187. ScholarBank@NUS Repository.
Abstract: The growth dynamics of WO3 thin films by laser ablation of a WO3 monoclinic phase target was studied. Space and time-resolved optical spectra indicated the presence of neutral (WI), ionized (WII) and electronically excited molecule (WO) species in the plume. The reaction between W and O2 was manifested in the laser deposition. Raman spectra showed the films deposited over a target-substrate distance longer than 5 cm or (/and) under an ambient oxygen pressure lower than 200 mTorr deviated from the monoclinic phase of the target with shortened and bent bonds. This was due to the insufficient surface or (/and) gas oxidation. The oxygen pressure and the target-substrate distance were found to be important features in the stoichiometric and monoclinic phase formation. Both gas and surface reactions were responsible for the ultimate monoclinic phase formation in the pulse laser deposition. Parameters were optimised for the oxygen pressure and target-substrate distance.
Source Title: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
URI: http://scholarbank.nus.edu.sg/handle/10635/83101
ISSN: 00214922
Appears in Collections:Staff Publications

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