Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jallcom.2006.02.114
Title: Structural and magnetic property of Co-doped-ZnO thin films prepared by pulsed laser deposition
Authors: Van, L.H. 
Hong, M.H. 
Ding, J. 
Keywords: Co-doped-ZnO thin film
Dilute magnetic semiconductor
Hexagonal zincite
Pulse laser deposition
Issue Date: 31-Jan-2008
Citation: Van, L.H., Hong, M.H., Ding, J. (2008-01-31). Structural and magnetic property of Co-doped-ZnO thin films prepared by pulsed laser deposition. Journal of Alloys and Compounds 449 (1-2) : 207-209. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jallcom.2006.02.114
Abstract: Co-doped-ZnO thin films with the hexagonal zincite structure (wurtzite) have been synthesized on (0 0 6) Al2O3 sapphire substrate by pulsed laser deposition. Properties of the synthesized films are studied and the relation of the properties to its structural is reported. Single phase and highly textured Co-doped-ZnO thin films are successfully grown at relatively low temperature, 100 °C. Only single zincite (0 0 2) phase is formed and no cobalt segregation is detected. The structural, magnetic, electrical and optical properties of the deposited films were analyzed. Magnetic ordering was observed for all the films and the magnitude of the ordering is strongly dependent on the substrate temperature during deposition. Semiconductors properties of the carrier concentration and resistivity were also studied by Hall effect measurement. Both films deposited at 100 °C and 600 °C still preserve its semiconductor electron carrier density at the range of 1021 cm-3. However, the resistivity increased with the increasing deposition temperature. © 2006 Elsevier B.V. All rights reserved.
Source Title: Journal of Alloys and Compounds
URI: http://scholarbank.nus.edu.sg/handle/10635/83092
ISSN: 09258388
DOI: 10.1016/j.jallcom.2006.02.114
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