Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2007.908599
Title: Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance
Authors: Loh, W.-Y.
Zang, H.
Oh, H.-J. 
Choi, K.-J.
Nguyen, H.S.
Lo, G.-Q.
Cho, B.J. 
Keywords: Carbon
Field effect transistors
Heterostructure
Mobility
MOSFET
MOSFETs
SiGe
Silicon
Silicon compounds
Issue Date: Dec-2007
Citation: Loh, W.-Y., Zang, H., Oh, H.-J., Choi, K.-J., Nguyen, H.S., Lo, G.-Q., Cho, B.J. (2007-12). Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance. IEEE Transactions on Electron Devices 54 (12) : 3292-3298. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2007.908599
Abstract: We report a novel Si/Si1-xGex channel with improved noise, current drivability, and reliability using a buried Si0.99C0.01, which can induce higher channel strain for the same Ge concentration. High-κ dielectrics on Si/ Si1-xGex with buried Si0.99 C0.01 show lower charge trapping, better leakage current distribution and less flatband voltage shift. Si/Si1-x Gex channel p-MOSFET with the buried Si0.99 C0.01 shows drive current improvement of up to 20% and better noise immunity. © 2007 IEEE.
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/83082
ISSN: 00189383
DOI: 10.1109/TED.2007.908599
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