Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2007.900195
Title: Strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structure
Authors: Ang, K.-W.
Tung, C.-H.
Balasubramanian, N.
Samudra, G.S. 
Yeo, Y.-C. 
Keywords: Electron mobility
Silicon/germanium
Strain-transfer structure (STS)
Strained n-channel field-effect transistor (n-FET)
Issue Date: Jul-2007
Citation: Ang, K.-W., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C. (2007-07). Strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structure. IEEE Electron Device Letters 28 (7) : 609-612. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.900195
Abstract: We report the demonstration of 55 nm gate length LG strained n-channel field-effect transistors (n-FETs) having an embedded Si1-xGex structure that is beneath the Si channel region and which acts as a strain-transfer structure (STS). The S1-xGex STS has lattice interactions with both the silicon source and drain regions and with the overlying Si channel region. This effectively results in a transfer of lateral tensile strain to the Si channel region for electron mobility enhancement. The mechanism of strain transfer is explained. Significant drive current Ion enhancement of 18% at a fixed off-state leakage Ioff of 100 nA/μm is achieved, which is attributed to the strain-induced mobility enhancement. Furthermore, continuous downsizing of transistors leads to higher Ion enhancement in the strained n-FETs, which is consistent with the increasing transconductance Gm improvement when the gate length is reduced. © 2007 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/83080
ISSN: 07413106
DOI: 10.1109/LED.2007.900195
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