Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2008.928025
Title: Strained n-channel FinFETs featuring in situ doped silicon-carbon (Si1-yCy) source and drain stressors with high carbon content
Authors: Liow, T.-Y.
Tan, K.-M.
Weeks, D.
Lee, R.T.P. 
Zhu, M. 
Hoe, K.-M.
Tung, C.-H.
Bauer, M.
Spear, J.
Thomas, S.G.
Samudra, G.S. 
Balasubramanian, N.
Yeo, Y.-C. 
Keywords: FinFET
In situ doped
Multiple-gate field-effect transistor (MuGFET)
Silicon-carbon
Strain
Stress
Issue Date: 2008
Citation: Liow, T.-Y., Tan, K.-M., Weeks, D., Lee, R.T.P., Zhu, M., Hoe, K.-M., Tung, C.-H., Bauer, M., Spear, J., Thomas, S.G., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C. (2008). Strained n-channel FinFETs featuring in situ doped silicon-carbon (Si1-yCy) source and drain stressors with high carbon content. IEEE Transactions on Electron Devices 55 (9) : 2475-2483. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2008.928025
Abstract: Phosphorus in situ doped Si1-yCy films (SiC:P) with substitutional carbon concentration of 1.7% and 2.1% were selectively grown in the source and drain regions of double-gate 〈110〉-oriented (110)-sidewall FinFETs to induce tensile strain in the silicon channel. In situ doping removes the need for a high-temperature spike anneal for source/drain (S/D) dopant activation and thus preserves the carbon substitutionality in the SiC:P films as grown. A strain-induced IDsat enhancement of ∼15% and ∼22% was obtained for n-channel FinFETs with 1.7% and 2.1% carbon incorporated in the S/D, respectively. © 2008 IEEE.
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/83079
ISSN: 00189383
DOI: 10.1109/TED.2008.928025
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