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|Title:||Strained n-channel field-effect transistors with channel proximate silicon-carbon source/drain stressors for performance enhancement|
|Citation:||Koh, S.-M., Wong, H.-S., Gong, X., Ng, C.-M., Variam, N., Henry, T., Erokhin, Y., Samudra, G.S., Yeo, Y.-C. (2010). Strained n-channel field-effect transistors with channel proximate silicon-carbon source/drain stressors for performance enhancement. Journal of the Electrochemical Society 157 (12) : H1088-H1094. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3493601|
|Abstract:||An integration scheme for realizing strained n-channel metal-oxide- semiconductor field-effect transistors (nFETS) with embedded silicon-carbon (e-Si:C) source/drain (S/D) stressors formed in close proximity to the channel was demonstrated. The stressors are termed channel-proximate (CP) Si:C S/D stressors, whose proximity to the channel improves their effectiveness in contributing to tensile strain in the channel region. Numerical simulation was performed using the finite-element method to assess the strain enhancement due to CP Si:C S/D. Key process development and material characterization were performed to understand the interaction between dopants and substitutional carbon concentration Csub. Unstrained control nFETs, nFETs with conventional Si:C S/D formed after spacers, and nFETs with CP Si:C S/D were fabricated. The nFET with CP Si:C S/D stressors achieved a drive current Ion enhancement of ∼19 and ∼8% over unstrained nFET and nFET with conventional Si:C S/D, respectively. The impact of channel orientation on I on enhancement was also investigated. © 2010 The Electrochemical Society.|
|Source Title:||Journal of the Electrochemical Society|
|Appears in Collections:||Staff Publications|
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