Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.3493601
Title: Strained n-channel field-effect transistors with channel proximate silicon-carbon source/drain stressors for performance enhancement
Authors: Koh, S.-M.
Wong, H.-S.
Gong, X.
Ng, C.-M.
Variam, N.
Henry, T.
Erokhin, Y.
Samudra, G.S. 
Yeo, Y.-C. 
Issue Date: 2010
Citation: Koh, S.-M., Wong, H.-S., Gong, X., Ng, C.-M., Variam, N., Henry, T., Erokhin, Y., Samudra, G.S., Yeo, Y.-C. (2010). Strained n-channel field-effect transistors with channel proximate silicon-carbon source/drain stressors for performance enhancement. Journal of the Electrochemical Society 157 (12) : H1088-H1094. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3493601
Abstract: An integration scheme for realizing strained n-channel metal-oxide- semiconductor field-effect transistors (nFETS) with embedded silicon-carbon (e-Si:C) source/drain (S/D) stressors formed in close proximity to the channel was demonstrated. The stressors are termed channel-proximate (CP) Si:C S/D stressors, whose proximity to the channel improves their effectiveness in contributing to tensile strain in the channel region. Numerical simulation was performed using the finite-element method to assess the strain enhancement due to CP Si:C S/D. Key process development and material characterization were performed to understand the interaction between dopants and substitutional carbon concentration Csub. Unstrained control nFETs, nFETs with conventional Si:C S/D formed after spacers, and nFETs with CP Si:C S/D were fabricated. The nFET with CP Si:C S/D stressors achieved a drive current Ion enhancement of ∼19 and ∼8% over unstrained nFET and nFET with conventional Si:C S/D, respectively. The impact of channel orientation on I on enhancement was also investigated. © 2010 The Electrochemical Society.
Source Title: Journal of the Electrochemical Society
URI: http://scholarbank.nus.edu.sg/handle/10635/83078
ISSN: 00134651
DOI: 10.1149/1.3493601
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