Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.sse.2013.01.027
Title: Strain engineering of ultra-thin silicon-on-insulator structures using through-buried-oxide ion implantation and crystallization
Authors: Ding, Y.
Cheng, R. 
Zhou, Q. 
Du, A.
Daval, N.
Nguyen, B.-Y.
Yeo, Y.-C. 
Keywords: Ion implantation
Nano-Beam Diffraction (NBD)
SiGe
SOI
Strain
Ultra-Thin Body and Buried-oxide (UTBB)
Issue Date: 2013
Citation: Ding, Y., Cheng, R., Zhou, Q., Du, A., Daval, N., Nguyen, B.-Y., Yeo, Y.-C. (2013). Strain engineering of ultra-thin silicon-on-insulator structures using through-buried-oxide ion implantation and crystallization. Solid-State Electronics 83 : 37-41. ScholarBank@NUS Repository. https://doi.org/10.1016/j.sse.2013.01.027
Abstract: We report a novel way of introducing strain in Ultra-Thin Body and Buried-Oxide (UTBB) SOI structures by Ge+ implant into the underlying Si substrate and the formation of localized SiGe regions underneath the buried oxide (BOX) by Crystallization. The localized SiGe regions result in local deformation of the ultra-thin Si. Compressive strain of up to -0.55% and -1.2% were detected by Nano-Beam Diffraction (NBD) at the center and the edge, respectively, of a 50 nm wide ultra-thin Si region located between two local SiGe regions. The under-the-BOX SiGe regions may be useful for strain engineering of ultra-thin body transistors formed on UTBB-SOI substrates. © 2013 Elsevier Ltd. All rights reserved.
Source Title: Solid-State Electronics
URI: http://scholarbank.nus.edu.sg/handle/10635/83075
ISSN: 00381101
DOI: 10.1016/j.sse.2013.01.027
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