Please use this identifier to cite or link to this item:
|Title:||Stability and composition of Ni-germanosilicided Si 1-xGe x films|
|Citation:||Pey, K.L.,Chattopadhyay, S.,Choi, W.K.,Miron, Y.,Fitzgerald, E.A.,Antoniadis, D.A.,Osipowicz, T. (2004-03). Stability and composition of Ni-germanosilicided Si 1-xGe x films. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 22 (2) : 852-858. ScholarBank@NUS Repository.|
|Abstract:||The stability and composition of the Ni-Germanosilicided films formed on relaxed Si 1-xGe x alloy was studied. The mechanism responsible for the solid phase thermal reaction between Ni and Si 0.75Ge 0.25 during the silicidation process and the germanosilicide film stability was also proposed. It was observed that the Ge composition varies along the depth of the germanosilicide film. It was found that the Ge and Ni composition in the nickel-germanosilicide grains varies strongly with the annealing temperature.|
|Source Title:||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 5, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.