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|Title:||Stability and composition of Ni-germanosilicided Si 1-xGe x films|
|Source:||Pey, K.L.,Chattopadhyay, S.,Choi, W.K.,Miron, Y.,Fitzgerald, E.A.,Antoniadis, D.A.,Osipowicz, T. (2004-03). Stability and composition of Ni-germanosilicided Si 1-xGe x films. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 22 (2) : 852-858. ScholarBank@NUS Repository.|
|Abstract:||The stability and composition of the Ni-Germanosilicided films formed on relaxed Si 1-xGe x alloy was studied. The mechanism responsible for the solid phase thermal reaction between Ni and Si 0.75Ge 0.25 during the silicidation process and the germanosilicide film stability was also proposed. It was observed that the Ge composition varies along the depth of the germanosilicide film. It was found that the Ge and Ni composition in the nickel-germanosilicide grains varies strongly with the annealing temperature.|
|Source Title:||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Appears in Collections:||Staff Publications|
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