Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jmmm.2004.09.141
Title: Spin injection with small ferromagnetic metal
Authors: Tan, S.G.
Jalil, M.B.A. 
Guo, J. 
Liew, T.
Teo, K.L. 
Chong, T.C.
Keywords: Bilayer
Injection
Resistance
Spin
Spreading
Issue Date: Mar-2005
Citation: Tan, S.G., Jalil, M.B.A., Guo, J., Liew, T., Teo, K.L., Chong, T.C. (2005-03). Spin injection with small ferromagnetic metal. Journal of Magnetism and Magnetic Materials 288 : 418-423. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jmmm.2004.09.141
Abstract: We present a design for spin injection from a ferromagnetic (FM)-nonmagnetic (NM) bilayer into a semiconductor (SC) layer. This device consists of a left bilayer injector, the SC layer and a right bilayer collector. The FM has a much smaller cross-sectional area (A) compared to the device. This increases the spin-dependent resistance as a fraction of the total device resistance and reduces the effect of conductivity mismatch which suppresses spin-injection efficiency. The NM layer is required as a buffer to contain the spreading resistance (R SP) that arises from the discontinuity of A. With Ni 80Fe 20/Cu as the bilayers, and GaAs as the SC, our computation yields a spin-injection efficiency of 20% for doping density N D of 10 18 cm -3, which rises to 30% for ND=1020cm-3. © 2004 Elsevier B.V. All rights reserved.
Source Title: Journal of Magnetism and Magnetic Materials
URI: http://scholarbank.nus.edu.sg/handle/10635/83050
ISSN: 03048853
DOI: 10.1016/j.jmmm.2004.09.141
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