Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2801097
Title: Spin injection due to interfacial spin asymmetry in a ferromagnet- semiconductor hybrid structure
Authors: Bala Kumar, S. 
Tan, S.G.
Jalil, M.B.A. 
Jiang, Y.
Issue Date: 2007
Source: Bala Kumar, S., Tan, S.G., Jalil, M.B.A., Jiang, Y. (2007). Spin injection due to interfacial spin asymmetry in a ferromagnet- semiconductor hybrid structure. Journal of Applied Physics 102 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2801097
Abstract: We have shown analytically that interfacial resistance, interfacial spin asymmetry, and therefore spin injection in a ferromagnetic-semiconductor- ferromagnetic condensed matter system are coupled to the spatially varying electrochemical potential. Our finding has technological significance because it implies spin injection sensitivity to external electrical bias. We show that as current density increases, spin asymmetry and the magnitude of interfacial resistance reduces, resulting in lower spin injection. We conclude that to increase spin injection, it is necessary to increase the intrinsic spin selectivity of the interfacial barriers. © 2007 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/83049
ISSN: 00218979
DOI: 10.1063/1.2801097
Appears in Collections:Staff Publications

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