Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2007.910779
Title: Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressors
Authors: Liow, T.-Y.
Tan, K.-M.
Lee, R.T.P. 
Zhu, M. 
Hoe, K.-M.
Samudra, G.S. 
Balasubramanian, N.
Yeo, Y.-C. 
Keywords: FinFET
Multiple-gate transistor (MuGFET)
Silicon-carbon
Spacerless
Strain
Stress
Issue Date: Jan-2008
Citation: Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Zhu, M., Hoe, K.-M., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C. (2008-01). Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressors. IEEE Electron Device Letters 29 (1) : 80-82. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.910779
Abstract: A novel and low-cost spacer removal technique proved successful in further enhancing the IDsat performance of already strained n-channel trigate FinFETs with SiC source and drain (S/D) stressors. This extra enhancement is attributed to increased longitudinal tensile channel stress as a result of increased stress coupling efficiency from the SiC S/D stressors to the channel. The electrical results also establish that this extra enhancement will become even more significant as physical gate lengths are scaled down. © 2008 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/83041
ISSN: 07413106
DOI: 10.1109/LED.2007.910779
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