Please use this identifier to cite or link to this item:
|Title:||Source engineering for tunnel field-effect transistor: Elevated source with vertical silicon-germanium/germanium heterostructure|
|Authors:||Han, G. |
|Citation:||Han, G., Guo, P., Yang, Y., Fan, L., Yee, Y.S., Zhan, C., Yeo, Y.-C. (2011-04). Source engineering for tunnel field-effect transistor: Elevated source with vertical silicon-germanium/germanium heterostructure. Japanese Journal of Applied Physics 50 (4 PART 2) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.50.04DJ07|
|Abstract:||In this work, we demonstrate by simulation and experiment that the performance of a p+ Si0.5Ge0.5 source tunnel field-effect transistor (TFET) can be improved by inserting an undoped Ge layer between source and channel. The Ge layer suppresses diffusion of boron into the Si channel and it also forms a Si0.5Ge0.5/Ge/Si hole quantum well, leading to an abrupt boron profile and a high hole concentration at the source edge. At the Ge/Si heterojunction, the presence of compressive strain in the Ge layer increases the valence band offset, while the tensile strain in the Si channel increases the conduction band offset, which effectively reduces the tunnel barrier and enhances the tunnel probability. Compared with a control device without the Ge layer, TFETs with a Si0.5Ge 0.5/Ge source show a higher on-state current ION and improved threshold voltage VTH and subthreshold characteristics. © 2011 The Japan Society of Applied Physics.|
|Source Title:||Japanese Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 19, 2019
WEB OF SCIENCETM
checked on Mar 4, 2019
checked on Feb 8, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.