Please use this identifier to cite or link to this item: https://doi.org/10.1143/JJAP.50.04DJ07
Title: Source engineering for tunnel field-effect transistor: Elevated source with vertical silicon-germanium/germanium heterostructure
Authors: Han, G. 
Guo, P.
Yang, Y.
Fan, L.
Yee, Y.S.
Zhan, C.
Yeo, Y.-C. 
Issue Date: Apr-2011
Citation: Han, G., Guo, P., Yang, Y., Fan, L., Yee, Y.S., Zhan, C., Yeo, Y.-C. (2011-04). Source engineering for tunnel field-effect transistor: Elevated source with vertical silicon-germanium/germanium heterostructure. Japanese Journal of Applied Physics 50 (4 PART 2) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.50.04DJ07
Abstract: In this work, we demonstrate by simulation and experiment that the performance of a p+ Si0.5Ge0.5 source tunnel field-effect transistor (TFET) can be improved by inserting an undoped Ge layer between source and channel. The Ge layer suppresses diffusion of boron into the Si channel and it also forms a Si0.5Ge0.5/Ge/Si hole quantum well, leading to an abrupt boron profile and a high hole concentration at the source edge. At the Ge/Si heterojunction, the presence of compressive strain in the Ge layer increases the valence band offset, while the tensile strain in the Si channel increases the conduction band offset, which effectively reduces the tunnel barrier and enhances the tunnel probability. Compared with a control device without the Ge layer, TFETs with a Si0.5Ge 0.5/Ge source show a higher on-state current ION and improved threshold voltage VTH and subthreshold characteristics. © 2011 The Japan Society of Applied Physics.
Source Title: Japanese Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/83038
ISSN: 00214922
DOI: 10.1143/JJAP.50.04DJ07
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