Please use this identifier to cite or link to this item:
|Title:||Silicon modulators and germanium photodetectors on SOI: Monolithic integration, compatibility, and performance optimization|
|Citation:||Liow, T.-Y., Ang, K.-W., Fang, Q., Song, J.-F., Xiong, Y.-Z., Yu, M.-B., Lo, G.-Q., Kwong, D.-L. (2010-01). Silicon modulators and germanium photodetectors on SOI: Monolithic integration, compatibility, and performance optimization. IEEE Journal on Selected Topics in Quantum Electronics 16 (1) : 307-315. ScholarBank@NUS Repository. https://doi.org/10.1109/JSTQE.2009.2028657|
|Abstract:||Si modulators and Ge photodetectors are monolithically integrated on Si-on-insulator. The carrier-depletion-type Si modulators achieved high modulation efficiency and speed (VπLπ = 2.56 Vcm, 10 Gb/s). Low-voltage operation (VRF = 1Vpp) was also demonstrated. Introducing a low-thermal-budget postepitaxy anneal improves the performance of the Ge photodetectors, thus resulting in significantly improved dark current. The responsivity and speed in the low-voltage regime are also enhanced, which enhances low-voltage or even short-circuit (VBias = 0 V) operation. © 2006 IEEE.|
|Source Title:||IEEE Journal on Selected Topics in Quantum Electronics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 14, 2018
WEB OF SCIENCETM
checked on Jun 19, 2018
checked on Jun 29, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.