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|Title:||Silicon modulators and germanium photodetectors on SOI: Monolithic integration, compatibility, and performance optimization|
|Citation:||Liow, T.-Y., Ang, K.-W., Fang, Q., Song, J.-F., Xiong, Y.-Z., Yu, M.-B., Lo, G.-Q., Kwong, D.-L. (2010-01). Silicon modulators and germanium photodetectors on SOI: Monolithic integration, compatibility, and performance optimization. IEEE Journal on Selected Topics in Quantum Electronics 16 (1) : 307-315. ScholarBank@NUS Repository. https://doi.org/10.1109/JSTQE.2009.2028657|
|Abstract:||Si modulators and Ge photodetectors are monolithically integrated on Si-on-insulator. The carrier-depletion-type Si modulators achieved high modulation efficiency and speed (VπLπ = 2.56 Vcm, 10 Gb/s). Low-voltage operation (VRF = 1Vpp) was also demonstrated. Introducing a low-thermal-budget postepitaxy anneal improves the performance of the Ge photodetectors, thus resulting in significantly improved dark current. The responsivity and speed in the low-voltage regime are also enhanced, which enhances low-voltage or even short-circuit (VBias = 0 V) operation. © 2006 IEEE.|
|Source Title:||IEEE Journal on Selected Topics in Quantum Electronics|
|Appears in Collections:||Staff Publications|
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