Please use this identifier to cite or link to this item: https://doi.org/10.1109/JSTQE.2009.2028657
Title: Silicon modulators and germanium photodetectors on SOI: Monolithic integration, compatibility, and performance optimization
Authors: Liow, T.-Y.
Ang, K.-W.
Fang, Q.
Song, J.-F.
Xiong, Y.-Z.
Yu, M.-B.
Lo, G.-Q.
Kwong, D.-L. 
Keywords: Germanium photodetector
Monolithic integration
Silicon modulator
Silicon photonics
Issue Date: Jan-2010
Citation: Liow, T.-Y., Ang, K.-W., Fang, Q., Song, J.-F., Xiong, Y.-Z., Yu, M.-B., Lo, G.-Q., Kwong, D.-L. (2010-01). Silicon modulators and germanium photodetectors on SOI: Monolithic integration, compatibility, and performance optimization. IEEE Journal on Selected Topics in Quantum Electronics 16 (1) : 307-315. ScholarBank@NUS Repository. https://doi.org/10.1109/JSTQE.2009.2028657
Abstract: Si modulators and Ge photodetectors are monolithically integrated on Si-on-insulator. The carrier-depletion-type Si modulators achieved high modulation efficiency and speed (VπLπ = 2.56 Vcm, 10 Gb/s). Low-voltage operation (VRF = 1Vpp) was also demonstrated. Introducing a low-thermal-budget postepitaxy anneal improves the performance of the Ge photodetectors, thus resulting in significantly improved dark current. The responsivity and speed in the low-voltage regime are also enhanced, which enhances low-voltage or even short-circuit (VBias = 0 V) operation. © 2006 IEEE.
Source Title: IEEE Journal on Selected Topics in Quantum Electronics
URI: http://scholarbank.nus.edu.sg/handle/10635/83020
ISSN: 1077260X
DOI: 10.1109/JSTQE.2009.2028657
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