Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2010.2044285
Title: Silane and ammonia surface passivation technology for high-mobility In 0.53Ga0.47As MOSFETs
Authors: Chin, H.-C.
Liu, X.
Gong, X.
Yeo, Y.-C. 
Keywords: High mobility
High-κ
InGaAs
Metal-oxide- semiconductor field-effect transistor (MOSFET)
Surface passivation
Issue Date: May-2010
Source: Chin, H.-C., Liu, X., Gong, X., Yeo, Y.-C. (2010-05). Silane and ammonia surface passivation technology for high-mobility In 0.53Ga0.47As MOSFETs. IEEE Transactions on Electron Devices 57 (5) : 973-979. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2010.2044285
Abstract: We report the integration of silane and ammonia SiH4 + NH 3) surface passivation technology to realize high-quality gate stack on a high-mobility In0.53Ga0.47As compound semiconductor. Vacuum anneal at 520 °C desorbs the native oxide while preserving the surface morphology and material composition of In0.53Ga 0.47As. By incorporating SiH4 + NH3 passivation, a thin silicon oxynitride (SiOxNy) interfacial layer was formed during high-κ dielectric deposition. In 0.53Ga0.47As n-MOSFETs with SiH4 + NH 3 passivation demonstrate significantly reduced subthreshold swing and off-state leakage current Ioff in comparison with control In 0.53Ga0.47As n-MOSFETs without passivation. This is due to significant reduction of interface state density Dit. Improvement in carrier mobility over the control In0.53Ga0.47As n-MOSFETs was also achieved with SiH4 + NH3 passivation. © 2010 IEEE.
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/83018
ISSN: 00189383
DOI: 10.1109/TED.2010.2044285
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

51
checked on Feb 20, 2018

WEB OF SCIENCETM
Citations

47
checked on Nov 21, 2017

Page view(s)

15
checked on Feb 16, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.