Please use this identifier to cite or link to this item: https://doi.org/10.1142/S0219581X05003036
Title: Self-consistent simulation of quantum dot flash memory device with SiO 2 and HfO 2 dielectrics
Authors: Chong, C.C.
Zhou, K.H.
Bai, P.
Li, Er.P.
Samudra, G.S. 
Keywords: Flash memory
High-k dielectric
Programming time
Quantum dot
Retention time
Tunneling current
Issue Date: Apr-2005
Citation: Chong, C.C., Zhou, K.H., Bai, P., Li, Er.P., Samudra, G.S. (2005-04). Self-consistent simulation of quantum dot flash memory device with SiO 2 and HfO 2 dielectrics. International Journal of Nanoscience 4 (2) : 171-178. ScholarBank@NUS Repository. https://doi.org/10.1142/S0219581X05003036
Abstract: Flash memory structure in which a silicon quantum dot embedded in the gate dielectric region between the channel and the control gate is considered. A self-consistent simulation for such memory devices is performed and aims to understand the relationship between the device structure and the meaningful quantities, as required for an efficient device operation. In this study, both the traditional SiO 2 and HfO 2 high-k dielectrics are being explored, and their results are compared and contrasted. In particular, the superiority of HfO 2 over the SiO 2 is demonstrated through various interlocking investigations on the relationships between the tunneling current, dielectric thickness, barrier height, programming and retention times. © World Scientific Publishing Company.
Source Title: International Journal of Nanoscience
URI: http://scholarbank.nus.edu.sg/handle/10635/83006
ISSN: 0219581X
DOI: 10.1142/S0219581X05003036
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