Please use this identifier to cite or link to this item:
|Title:||Self-aligned gate-first In0.7Ga0.3 As n-MOSFETs with an InP capping layer for performance enhancement|
|Citation:||Gong, X., Ivana, Chin, H.-C., Zhu, Z., Lin, Y.-R., Ko, C.-H., Wann, C.H., Yeo, Y.-C. (2011). Self-aligned gate-first In0.7Ga0.3 As n-MOSFETs with an InP capping layer for performance enhancement. Electrochemical and Solid-State Letters 14 (3) : H117-H119. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3526139|
|Abstract:||We report the first demonstration of InP-capped In0.7Ga 0.3 As channel n-metal-oxide-semiconductor field-effect transistors (MOSFETs) using a self-aligned gate-first process. MOSFETs with the gate length LG down to 350 nm were fabricated, and the dependence of device performance on the InP thickness (2 and 4 nm) was investigated. InP capping leads to a significant reduction in the subthreshold swing S. Transconductance and saturation drain current are enhanced in n-MOSFETs with the InP-capped In 0.7Ga0.3 As channel as compared with those without InP capping, indicating an increased electron mobility in the In 0.7Ga0.3 As channel due to the InP capping. © 2010 The Electrochemical Society.|
|Source Title:||Electrochemical and Solid-State Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 17, 2018
WEB OF SCIENCETM
checked on Jun 27, 2018
checked on Apr 20, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.