Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.3526139
Title: Self-aligned gate-first In0.7Ga0.3 As n-MOSFETs with an InP capping layer for performance enhancement
Authors: Gong, X.
Ivana
Chin, H.-C.
Zhu, Z.
Lin, Y.-R.
Ko, C.-H.
Wann, C.H.
Yeo, Y.-C. 
Issue Date: 2011
Citation: Gong, X., Ivana, Chin, H.-C., Zhu, Z., Lin, Y.-R., Ko, C.-H., Wann, C.H., Yeo, Y.-C. (2011). Self-aligned gate-first In0.7Ga0.3 As n-MOSFETs with an InP capping layer for performance enhancement. Electrochemical and Solid-State Letters 14 (3) : H117-H119. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3526139
Abstract: We report the first demonstration of InP-capped In0.7Ga 0.3 As channel n-metal-oxide-semiconductor field-effect transistors (MOSFETs) using a self-aligned gate-first process. MOSFETs with the gate length LG down to 350 nm were fabricated, and the dependence of device performance on the InP thickness (2 and 4 nm) was investigated. InP capping leads to a significant reduction in the subthreshold swing S. Transconductance and saturation drain current are enhanced in n-MOSFETs with the InP-capped In 0.7Ga0.3 As channel as compared with those without InP capping, indicating an increased electron mobility in the In 0.7Ga0.3 As channel due to the InP capping. © 2010 The Electrochemical Society.
Source Title: Electrochemical and Solid-State Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/83004
ISSN: 10990062
DOI: 10.1149/1.3526139
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