Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.3592211
Title: Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors
Authors: Zhang, X.
Guo, H.
Lin, H.-Y.
Cheng, C.-C.
Ko, C.-H.
Wann, C.H.
Luo, G.-L.
Chang, C.-Y.
Chien, C.-H.
Han, Z.-Y.
Huang, S.-C.
Chin, H.-C.
Gong, X.
Koh, S.-M.
Lim, P.S.Y.
Yeo, Y.-C. 
Issue Date: May-2011
Citation: Zhang, X., Guo, H., Lin, H.-Y., Cheng, C.-C., Ko, C.-H., Wann, C.H., Luo, G.-L., Chang, C.-Y., Chien, C.-H., Han, Z.-Y., Huang, S.-C., Chin, H.-C., Gong, X., Koh, S.-M., Lim, P.S.Y., Yeo, Y.-C. (2011-05). Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 29 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1116/1.3592211
Abstract: The demonstration of a salicidelike self-aligned contact technology for III-V metal-oxide-semiconductor field-effect transistors (MOSFETs) is reported. A thin and continuous crystalline germanium-silicon (GeSi) layer was selectively formed on n+ doped gallium arsenide (GaAs) regions by epitaxy. A new self-aligned nickel germanosilicide (NiGeSi) Ohmic contact with good morphology was achieved using a two-step annealing process with precise conversion of the GeSi layer into NiGeSi. NiGeSi contact with the contact resistivity (ρ e) of 1.57 mm and sheet resistance (Rsh) of 2.8/ was achieved. The NiGeSi-based self-aligned contact technology is promising for future integration in high performance III-V MOSFETs. © 2011 American Vacuum Society.
Source Title: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
URI: http://scholarbank.nus.edu.sg/handle/10635/83003
ISSN: 10711023
DOI: 10.1116/1.3592211
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