Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2012.2191760
Title: Selenium segregation for effective schottky barrier height reduction in NiGe/n-Ge contacts
Authors: Tong, Y.
Liu, B.
Lim, P.S.Y.
Yeo, Y.-C. 
Keywords: Nickel germanide (NiGe)
Schottky barrier height
segregation
selenium implant
Issue Date: 2012
Citation: Tong, Y., Liu, B., Lim, P.S.Y., Yeo, Y.-C. (2012). Selenium segregation for effective schottky barrier height reduction in NiGe/n-Ge contacts. IEEE Electron Device Letters 33 (6) : 773-775. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2012.2191760
Abstract: In this letter, we report the demonstration of an effective electron Schottky barrier height (ΦB n) reduction technology for NiGe/n-type Germanium (n-Ge) contacts using ion implantation of selenium (Se) followed by its segregation at NiGe/n-Ge interface. Se was found to segregate at NiGe/n-Ge interface after germanide formation. Nickel monogermanide was formed using a 350 °C 30-s anneal. Se segregation gives ΦB n as low as ∼ 0.13 eV. © 2012 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/83002
ISSN: 07413106
DOI: 10.1109/LED.2012.2191760
Appears in Collections:Staff Publications

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