Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2724776
Title: Saturated dot density of InAs/GaAs self-assembled quantum dots grown at high growth rate
Authors: Chia, C.K.
Zhang, Y.W. 
Wong, S.S.
Yong, A.M.
Chow, S.Y.
Chua, S.J. 
Guo, J.
Issue Date: 2007
Citation: Chia, C.K., Zhang, Y.W., Wong, S.S., Yong, A.M., Chow, S.Y., Chua, S.J., Guo, J. (2007). Saturated dot density of InAs/GaAs self-assembled quantum dots grown at high growth rate. Applied Physics Letters 90 (16) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2724776
Abstract: The variation in dot density, dot size, and photoluminescence intensity in two series of 1.8 and 2.5 ML InAs quantum dots (QDs) as a function of InAs growth rate has been investigated. As the growth rate increases from 0.14 to 3.60 ML/s, the average dot lateral size reduces by half, whereas the dot density increases five times. Nonlinear relationships were observed between dot density, dot size, and growth rate. The dot density is found to saturate at a growth rate of 3 ML/s. High dot density of 7.76 × 1011 cm -2 has been demonstrated and is beneficial for applications in high power QD devices © 2007 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82993
ISSN: 00036951
DOI: 10.1063/1.2724776
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