Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3541885
Title: Role of oxygen for highly conducting and transparent gallium-doped zinc oxide electrode deposited at room temperature
Authors: Wong, L.M.
Chiam, S.Y.
Huang, J.Q.
Wang, S.J.
Pan, J.S.
Chim, W.K. 
Issue Date: 10-Jan-2011
Citation: Wong, L.M., Chiam, S.Y., Huang, J.Q., Wang, S.J., Pan, J.S., Chim, W.K. (2011-01-10). Role of oxygen for highly conducting and transparent gallium-doped zinc oxide electrode deposited at room temperature. Applied Physics Letters 98 (2) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3541885
Abstract: In this work, we found that a desirable amount of oxygen can reduce defect related scattering in enhancing carrier mobility for pulsed laser deposited zinc oxide. However, excessive oxygen can lead to formation of oxygen interstitials that can act as compensation or scattering centers. At higher oxygen pressures, structural changes that increase grain boundary scattering prove to be very important. We introduce a simple transparency index to quantify the transmission of the thin films for usage as electrodes in photovoltaic devices. An excellent resistivity of ∼ 3.9 × 10-4 Ω cm and an electron mobility of ∼19.2 cm2/Vs with a transparency index of 0.84 (84% of total solar spectrum transmitted) were achieved at room temperature suggesting possible applications in plastic devices. © 2011 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82992
ISSN: 00036951
DOI: 10.1063/1.3541885
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

36
checked on Nov 12, 2018

WEB OF SCIENCETM
Citations

30
checked on Oct 17, 2018

Page view(s)

33
checked on Nov 9, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.