Please use this identifier to cite or link to this item:
|Title:||Role of oxygen for highly conducting and transparent gallium-doped zinc oxide electrode deposited at room temperature|
|Citation:||Wong, L.M., Chiam, S.Y., Huang, J.Q., Wang, S.J., Pan, J.S., Chim, W.K. (2011-01-10). Role of oxygen for highly conducting and transparent gallium-doped zinc oxide electrode deposited at room temperature. Applied Physics Letters 98 (2) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3541885|
|Abstract:||In this work, we found that a desirable amount of oxygen can reduce defect related scattering in enhancing carrier mobility for pulsed laser deposited zinc oxide. However, excessive oxygen can lead to formation of oxygen interstitials that can act as compensation or scattering centers. At higher oxygen pressures, structural changes that increase grain boundary scattering prove to be very important. We introduce a simple transparency index to quantify the transmission of the thin films for usage as electrodes in photovoltaic devices. An excellent resistivity of ∼ 3.9 × 10-4 Ω cm and an electron mobility of ∼19.2 cm2/Vs with a transparency index of 0.84 (84% of total solar spectrum transmitted) were achieved at room temperature suggesting possible applications in plastic devices. © 2011 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 20, 2019
WEB OF SCIENCETM
checked on Mar 11, 2019
checked on Mar 2, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.