Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/82975
DC Field | Value | |
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dc.title | Reliability Characteristics of Poly Si-gated High Quality Chemical Vapor Deposition Hafnium Oxide Gate Dielectric | |
dc.contributor.author | Lee, S. | |
dc.contributor.author | Kwong, D.-L. | |
dc.date.accessioned | 2014-10-07T04:35:44Z | |
dc.date.available | 2014-10-07T04:35:44Z | |
dc.date.issued | 2004-02 | |
dc.identifier.citation | Lee, S.,Kwong, D.-L. (2004-02). Reliability Characteristics of Poly Si-gated High Quality Chemical Vapor Deposition Hafnium Oxide Gate Dielectric. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 43 (2) : 427-431. ScholarBank@NUS Repository. | |
dc.identifier.issn | 00214922 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82975 | |
dc.description.abstract | In this paper, reliability characteristics of chemical vapor deposition (CVD) HfO 2 gate stacks with n +-poly-Si gate electrode are investigated systematically, along with long-term lifetime projection. The area dependence and critical defect density of CVD HfO 2 gate stacks have been investigated and compared to that of SiO 2. Results show that in addition to the significant reduction of tunneling leakage current by a factor of 10 3-10 4, a comparable Weibull slope factor and critical defect density are obtained from a high quality CVD HfO 2 mainly due to the thicker physical thickness, compare to SiO 2. Considering the cumulative impact of temperature acceleration at 150°C, scaling of an effective gate oxide area of 0.1 cm 2 and a maximum allowed fraction of failures of 0.01%, the maximum allowed operating voltage is projected to be ∼0.85V for HfO 2/poly-Si gate stack with equivalent oxide thickness (EOT) = 14.5 Å. | |
dc.source | Scopus | |
dc.subject | Hafnium oxide | |
dc.subject | Reliability | |
dc.subject | TDDB | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.sourcetitle | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | |
dc.description.volume | 43 | |
dc.description.issue | 2 | |
dc.description.page | 427-431 | |
dc.description.coden | JAPND | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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