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|Title:||Reliability Characteristics of Poly Si-gated High Quality Chemical Vapor Deposition Hafnium Oxide Gate Dielectric|
|Authors:||Lee, S. |
|Citation:||Lee, S.,Kwong, D.-L. (2004-02). Reliability Characteristics of Poly Si-gated High Quality Chemical Vapor Deposition Hafnium Oxide Gate Dielectric. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 43 (2) : 427-431. ScholarBank@NUS Repository.|
|Abstract:||In this paper, reliability characteristics of chemical vapor deposition (CVD) HfO 2 gate stacks with n +-poly-Si gate electrode are investigated systematically, along with long-term lifetime projection. The area dependence and critical defect density of CVD HfO 2 gate stacks have been investigated and compared to that of SiO 2. Results show that in addition to the significant reduction of tunneling leakage current by a factor of 10 3-10 4, a comparable Weibull slope factor and critical defect density are obtained from a high quality CVD HfO 2 mainly due to the thicker physical thickness, compare to SiO 2. Considering the cumulative impact of temperature acceleration at 150°C, scaling of an effective gate oxide area of 0.1 cm 2 and a maximum allowed fraction of failures of 0.01%, the maximum allowed operating voltage is projected to be ∼0.85V for HfO 2/poly-Si gate stack with equivalent oxide thickness (EOT) = 14.5 Å.|
|Source Title:||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Appears in Collections:||Staff Publications|
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