Please use this identifier to cite or link to this item: https://doi.org/10.1149/2.013304jss
Title: Relaxed and strained patterned germanium-tin structures: A Raman scattering study
Authors: Cheng, R. 
Wang, W.
Gong, X.
Sun, L.
Guo, P.
Hu, H.
Shen, Z.
Han, G. 
Yeo, Y.-C. 
Issue Date: 2013
Source: Cheng, R., Wang, W., Gong, X., Sun, L., Guo, P., Hu, H., Shen, Z., Han, G., Yeo, Y.-C. (2013). Relaxed and strained patterned germanium-tin structures: A Raman scattering study. ECS Journal of Solid State Science and Technology 2 (4) : P138-P145. ScholarBank@NUS Repository. https://doi.org/10.1149/2.013304jss
Abstract: We report the first realization of fully-released and relaxed Ge 1-xSnx structures on Ge substrate. The coefficients of Raman peak shift a and b due to the alloy disorder and strain, respectively, were experimentally obtained for Ge1-xSnx. In addition, to lower the Sn composition needed to achieve direct bandgap Ge 1-xSnx alloys and also to realize channel materials with higher electron mobility, uniaxially tensile strained Ge1-xSn x patterns were fabricated. Large tensile strain (>1%) was detected in the patterned Ge1-xSnx lines. Such tensile-strained Ge1-xSnx structures could enable the realization of Group-IV optoelectronic devices and high mobility n-channel transistors. © 2013 The Electrochemical Society.
Source Title: ECS Journal of Solid State Science and Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/82973
ISSN: 21628769
DOI: 10.1149/2.013304jss
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