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|Title:||Rapid thermal oxidation of radio frequency sputtered polycrystalline Si1-xGex thin films|
Polycrystalline SiGe films
Radio frequency sputtered
|Citation:||Natarajan, A., Bera, L.K., Choi, W.K., Osipowicz, T., Seng, H.L. (2001-11). Rapid thermal oxidation of radio frequency sputtered polycrystalline Si1-xGex thin films. Solid-State Electronics 45 (11) : 1957-1961. ScholarBank@NUS Repository. https://doi.org/10.1016/S0038-1101(01)00240-4|
|Abstract:||This work presents the structural and electrical results of rapid thermal oxidation of radio frequency sputtered polycrystalline Si1-xGex thin films. The atomic force microscopy results show Ge island sizes between 175 and 215 nm. The Fourier transform infrared and X-ray photoelectron spectroscopy measurements reveal the formation of GeO2 in oxidized polycrystalline Si0.61Ge0.39 and GeO2 plus GeOx in oxidized polycrystalline Si0.73Ge0.27 samples. The MOS capacitors fabricated from the polycrystalline Si0.61Ge0.39 film exhibit a lower leakage current and a higher breakdown voltage compared to those fabricated from polycrystalline Si0.73Ge0.27 substrate. The interface trap density and fixed oxide charge density were also found to be lower for the MOS capacitor fabricated from the polycrystalline Si0.61Ge0.39 film. © 2001 Elsevier Science Ltd. All rights reserved.|
|Source Title:||Solid-State Electronics|
|Appears in Collections:||Staff Publications|
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