Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.2137329
Title: Rapid thermal oxidation of Ge-rich Si1-xGex heterolayers
Authors: Bera, M.K.
Chakraborty, S.
Das, R.
Dalapati, G.K.
Chattopadhyay, S.
Samanta, S.K. 
Yoo, W.J. 
Chakraborty, A.K.
Butenko, Y.
Šiller, L.
Hunt, M.R.C.
Saha, S.
Maiti, C.K.
Issue Date: Jan-2006
Citation: Bera, M.K., Chakraborty, S., Das, R., Dalapati, G.K., Chattopadhyay, S., Samanta, S.K., Yoo, W.J., Chakraborty, A.K., Butenko, Y., Šiller, L., Hunt, M.R.C., Saha, S., Maiti, C.K. (2006-01). Rapid thermal oxidation of Ge-rich Si1-xGex heterolayers. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 24 (1) : 84-90. ScholarBank@NUS Repository. https://doi.org/10.1116/1.2137329
Abstract: Rapid thermal oxidation (RTO) of the Ge-rich (x=0.7) Si1-x Gex heterolayer is reported. In particular, the structural modifications of SiGe films during oxidation process and the dependence of the oxidation kinetics on Ge content, oxidation temperature, and oxide thickness have been studied. The segregation mechanism of Ge at the oxideSiGe interface is discussed. Interface properties of the RTO-grown oxides studied using high-frequency capacitance-voltage (C-V) characteristics of metal-oxide-semiconductor capacitors are also reported.
Source Title: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
URI: http://scholarbank.nus.edu.sg/handle/10635/82967
ISSN: 07342101
DOI: 10.1116/1.2137329
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