Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/82965
Title: Random telegraphic signals and low-frequency noise in rapid-thermal-annealed silicon-silicon oxide structures
Authors: Chim, W.K. 
Leong, K.K.
Choi, W.K. 
Keywords: C-V measurement
Flicker noise
FTIR
Interface state
MOS capacitor
Oxide fixed charge
Random telegraphic signal
Rapid thermal annealing
Silicon dioxide
Issue Date: Jan-2001
Citation: Chim, W.K.,Leong, K.K.,Choi, W.K. (2001-01). Random telegraphic signals and low-frequency noise in rapid-thermal-annealed silicon-silicon oxide structures. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 40 (1) : 1-6. ScholarBank@NUS Repository.
Abstract: Random telegraphic signals (RTSs) were observed in aluminium-silicon oxide-silicon (Al-SiO2-Si) metal-oxide-semiconductor capacitors with large contact areas of about 7.85 × 10-3 cm2, which have been subjected to rapid thermal annealing (RTA) in an argon ambient at 600 to 700°C for 50 s. The RTSs change from a two-level RTS to a multilevel RTS as the device bias voltage or temperature is increased. Samples showing RTSs generally exhibit low breakdown voltages and show a Lorentzian spectrum at a frequency between 30 to 400 Hz. Furthermore, the interface-state density from samples exhibiting RTSs is generally higher than that from samples that do not show any RTSs. We suggest that the RTA process over a specific temperature range has produced weak spots in the devices. The filling and emptying processes of a trap near a weak spot modulate the barrier height, resulting in the RTS and the Lorentzian spectrum observed in these devices.
Source Title: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
URI: http://scholarbank.nus.edu.sg/handle/10635/82965
ISSN: 00214922
Appears in Collections:Staff Publications

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