Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2006.880640
Title: Random telegraph signal noise in gate-all-around Si-FinFET with ultranarrow body
Authors: Lim, Y.F.
Xiong, Y.Z.
Singh, N.
Yang, R.
Jiang, Y.
Chan, D.S.H. 
Loh, W.Y.
Bera, L.K.
Lo, G.Q.
Balasubramanian, N.
Kwong, D.-L.
Keywords: FinFET
Flicker (1/f) noise
Gate-all-around (GAA)
Noise
Random telegraph signals (RTS)
Issue Date: Sep-2006
Citation: Lim, Y.F., Xiong, Y.Z., Singh, N., Yang, R., Jiang, Y., Chan, D.S.H., Loh, W.Y., Bera, L.K., Lo, G.Q., Balasubramanian, N., Kwong, D.-L. (2006-09). Random telegraph signal noise in gate-all-around Si-FinFET with ultranarrow body. IEEE Electron Device Letters 27 (9) : 765-768. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2006.880640
Abstract: For the first time, the random telegraph signal (RTS) and its corresponding flicker noise (1/f) were investigated in gate-all-around p-type Si-FinFETs. For a device with gate width of ∼ 100 nm (fin height) and length of ∼ 200 nm, the typical RTS capture/emission time constants were ∼ 0.1-1 ms. Very large RTS amplitudes (ΔId/Id up to 25%) were observed, which is an effect attributable to the extreme device scaling and/or interface quality of FinFETs. The estimated scattering coefficients (α ∼ 10-12 - 10-13) are found to be higher than typical values obtained from MOSFETs. These findings demonstrate the relevance of RTS for FinFET operation. © 2006 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82964
ISSN: 07413106
DOI: 10.1109/LED.2006.880640
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