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|Title:||Raman and photoluminescence properties of Ge nanocrystals in silicon oxide matrix|
|Authors:||Jie, Y.X. |
|Citation:||Jie, Y.X., Wee, A.T.S., Huan, C.H.A., Sun, W.X., Shen, Z.X., Chua, S.J. (2004-02-25). Raman and photoluminescence properties of Ge nanocrystals in silicon oxide matrix. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 107 (1) : 8-13. ScholarBank@NUS Repository. https://doi.org/10.1016/j.mseb.2003.09.037|
|Abstract:||Ge nanocrystals (nc-Ge) embedded in silicon oxide thin films have been fabricated using rf magnetron co-sputtering deposition and post-growth thermal annealing method. Raman scattering and photoluminscence (PL) measurements have been used to characterize their crystallization and light emission properties. The Ge crystallinity and nanocrystal size obtained using a three-peak fitting method based on a phonon confinement model have been found to increase with the increase of annealing temperature. The observed blue photoluminescence band located at ∼3.1eV and a weaker band at ∼2.4eV under the excitation of 325nm laser did not show significant size dependence while their relative intensities were related to the addition of H2 or O2 into the sputtering ambient. The photoluminescence mechanism is discussed. © 2003 Elsevier B.V. All rights reserved.|
|Source Title:||Materials Science and Engineering B: Solid-State Materials for Advanced Technology|
|Appears in Collections:||Staff Publications|
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