Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0928-4931(01)00288-0
Title: Raman and photoluminescence characterization of Ge nanocrystals in co-sputtered Ge + SiO2 system
Authors: Choi, W.K 
Ng, V. 
Ho, Y.W
Ng, S.P
Chen, T.B
Yu, M.B
Rusli
Yoon, S.F
Cheong, B.A
Chen, G.L
Keywords: Ge nanocrystals
Photoluminescence
Raman
Issue Date: 20-Oct-2001
Citation: Choi, W.K, Ng, V., Ho, Y.W, Ng, S.P, Chen, T.B, Yu, M.B, Rusli, Yoon, S.F, Cheong, B.A, Chen, G.L (2001-10-20). Raman and photoluminescence characterization of Ge nanocrystals in co-sputtered Ge + SiO2 system. Materials Science and Engineering C 16 (1-2) : 135-138. ScholarBank@NUS Repository. https://doi.org/10.1016/S0928-4931(01)00288-0
Abstract: Raman and photoluminescence (PL) results of Ge nanocrystals prepared from co-sputtered Ge + SiO2 samples under rapid-thermal annealling (RTA) with different annealing conditions are presented. The Raman results showed a transition from amorphous to nanocrystalline Ge when the samples were annealed at a temperature higher than 700 °C for longer than 300 s. The Raman spectrum of sample annealed at 1000 °C is very similar to that of the as-deposited amorphous sample. However, when the annealing duration is reduced to less than 50 s, clear Raman signals can be seen for samples annealed at 1000 °C. Transmission electron micrographs showed that uniform Ge nanocrystals were obtained for samples annealed at 800 °C for 300 s or 1000 °C for 50 s, and nanocrystals with multiple twinned structure (of diameter ~ 200 Å) were observed near the Si-SiO2 interface (1000 °C for 300 s). PL results showed that maximum intensity of the 1.9 and 3.0 eV peaks was obtained from samples annealed at 800 °C for 20 s or transiently to 1000 °C at 30 °C/s. These results suggest that a critical thermal budget is required for the formation of uniform nanocrystals and for maximum PL emission. © 2001 Elsevier Science B.V. All rights reserved.
Source Title: Materials Science and Engineering C
URI: http://scholarbank.nus.edu.sg/handle/10635/82956
ISSN: 09284931
DOI: 10.1016/S0928-4931(01)00288-0
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