Please use this identifier to cite or link to this item:
|Title:||Raman and photoluminescence characterization of Ge nanocrystals in co-sputtered Ge + SiO2 system|
|Authors:||Choi, W.K |
|Citation:||Choi, W.K, Ng, V., Ho, Y.W, Ng, S.P, Chen, T.B, Yu, M.B, Rusli, Yoon, S.F, Cheong, B.A, Chen, G.L (2001-10-20). Raman and photoluminescence characterization of Ge nanocrystals in co-sputtered Ge + SiO2 system. Materials Science and Engineering C 16 (1-2) : 135-138. ScholarBank@NUS Repository. https://doi.org/10.1016/S0928-4931(01)00288-0|
|Abstract:||Raman and photoluminescence (PL) results of Ge nanocrystals prepared from co-sputtered Ge + SiO2 samples under rapid-thermal annealling (RTA) with different annealing conditions are presented. The Raman results showed a transition from amorphous to nanocrystalline Ge when the samples were annealed at a temperature higher than 700 °C for longer than 300 s. The Raman spectrum of sample annealed at 1000 °C is very similar to that of the as-deposited amorphous sample. However, when the annealing duration is reduced to less than 50 s, clear Raman signals can be seen for samples annealed at 1000 °C. Transmission electron micrographs showed that uniform Ge nanocrystals were obtained for samples annealed at 800 °C for 300 s or 1000 °C for 50 s, and nanocrystals with multiple twinned structure (of diameter ~ 200 Å) were observed near the Si-SiO2 interface (1000 °C for 300 s). PL results showed that maximum intensity of the 1.9 and 3.0 eV peaks was obtained from samples annealed at 800 °C for 20 s or transiently to 1000 °C at 30 °C/s. These results suggest that a critical thermal budget is required for the formation of uniform nanocrystals and for maximum PL emission. © 2001 Elsevier Science B.V. All rights reserved.|
|Source Title:||Materials Science and Engineering C|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 19, 2019
WEB OF SCIENCETM
checked on Mar 4, 2019
checked on Jan 12, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.