Please use this identifier to cite or link to this item:
https://doi.org/10.1109/16.974756
DC Field | Value | |
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dc.title | Quasi-two-dimensional transmission line model (QTD-TLM) for planar ohmic contact studies | |
dc.contributor.author | Chor, E.F. | |
dc.contributor.author | Lerdworatawee, J. | |
dc.date.accessioned | 2014-10-07T04:35:29Z | |
dc.date.available | 2014-10-07T04:35:29Z | |
dc.date.issued | 2002-01 | |
dc.identifier.citation | Chor, E.F., Lerdworatawee, J. (2002-01). Quasi-two-dimensional transmission line model (QTD-TLM) for planar ohmic contact studies. IEEE Transactions on Electron Devices 49 (1) : 105-111. ScholarBank@NUS Repository. https://doi.org/10.1109/16.974756 | |
dc.identifier.issn | 00189383 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82954 | |
dc.description.abstract | An analytical quasi-two-dimensional transmission line model (QTD-TLM) has been formulated to more accurately extract the specific contact resistance (ρ c) of ohmic contacts than the conventional one-dimensional TLM (1D-TLM). Similar to 1D-TLM, the extraction of ρ c using QTD-TLD is straightforward. By means of the conformal mapping technique, the two-dimensional (2-D) (or lateral) current flow and current crowding, owing to the presence of a gap between the TLM mesa and contacts, are jointly incorporated into our model using a single shunt resistor. QTD-TLM is generalized as it is applicable to a variety of contact dimensions and gap widths, and to both alloyed and nonalloyed contacts. The validity of QTD-TLM has been verified experimentally using two alloyed and two nonalloyed ohmic contacts, and by comparison with results from a 2-D numerical model. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/16.974756 | |
dc.source | Scopus | |
dc.subject | Contact resistance | |
dc.subject | Ohmic contacts | |
dc.subject | Specific contact resistance | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/16.974756 | |
dc.description.sourcetitle | IEEE Transactions on Electron Devices | |
dc.description.volume | 49 | |
dc.description.issue | 1 | |
dc.description.page | 105-111 | |
dc.description.coden | IETDA | |
dc.identifier.isiut | 000173338000017 | |
Appears in Collections: | Staff Publications |
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